EPR in Semiconductors

Spin-Hamiltonian parameter database for EPR centers in semiconductors

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S=1 case:
Si/V2O2/P2.inp

ROADMAP, EPRFD, EULER, ECHO, PRTPROPAR, PLOT=1,
FREQ=9105.0, AUTONUC, NN=0, NSITE=12

Label:P2(g,D)
Author:T. Umeda
Reference:Y.-H. Lee, J.W. Corbett, Phys. Rev. B 13, 2653 (1976).
Origin:V2+O2(0)
Sample:p or n-CZ-Si, 4-MeV-e-irraditaed at <100degC with 0.5 to 12e18 electrons/cm2
Symmetry:Monoclinic-I
Temperature:77K
Coordinate:x=[100],y=[011],z=[0-11]
RelativeIntensity:1
OtherRemarks:annealed at 350degC. IR-band=1000cm-1
gx:2.00990
gy:2.00880
gz:2.00190
Dx:43.00
Dy:29.00
Dz:-74.00
version:5
date:2004/12/03 12:53:08

1

2.0019	2.0099	2.0088
-58	0	0

27.7202	-11.4097	0
	-72.7202	0
			43

1, 0

1	0	0
0	1	0
0	0	1

-1	0	0
0	0	-1
0	-1	0

1	0	0
0	-1	0
0	0	-1

-1	0	0
0	0	1
0	1	0

0		-0.707107	0.707107
0.707107	-0.5		-0.5
0.707107	0.5		0.5

0		0.707107	-0.707107
-0.707107	-0.5		-0.5
-0.707107	0.5		0.5

0		-0.707107	0.707107
-0.707107	0.5		0.5
-0.707107	-0.5		-0.5

0		0.707107	-0.707107
0.707107	0.5		0.5
0.707107	-0.5		-0.5

0		0.707107	0.707107
-0.707107	-0.5		0.5
0.707107	-0.5		0.5

0		-0.707107	-0.707107
0.707107	-0.5		0.5
-0.707107	-0.5		0.5

0		-0.707107	-0.707107
-0.707107	0.5		-0.5
0.707107	0.5		-0.5

0		0.707107	0.707107
0.707107	0.5		-0.5
-0.707107	0.5		-0.5

90.0,	90.0,	90.0,	0.0
0.0,	90.0,	2.0

2
1,	2
2,	3

2
1,	2
2,	3

2
1,	2
2,	3

2
1,	2
2,	3

2
1,	2
2,	3

2
1,	2
2,	3

2
1,	2
2,	3

2
1,	2
2,	3

2
1,	2
2,	3

2
1,	2
2,	3

2
1,	2
2,	3

2
1,	2
2,	3